SSF2810EH2 Datasheet - Silikron Semiconductor

SSF2810EH2, MOSFET

Main Product Characteristics: VDSS 20V RDS(on) 10mΩ (typ.) ID 8A①

Features

* TSSOP-8
* Advanced MOSFET process technology
* Ultra low on-resistance with low gate charge
* High Power and current handing capability
* 150℃ operating temperature

Applications

* Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current ① Continuous Drain Current ① Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storag

SSF2810EH2-SilikronSemiconductor.pdf