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SSF20N50UH MOSFET

SSF20N50UH Description

Main Product Characteristics VDSS RDS(on) ID 500V 0.2Ω (typ.) 20A ① .
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.

SSF20N50UH Features

* TO-247
* Advanced Process Technology

SSF20N50UH Applications

* Ultra low on-resistance with low gate charge

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Datasheet Details

Part number
SSF20N50UH
Manufacturer
Silikron
File Size
436.62 KB
Datasheet
SSF20N50UH-Silikron.pdf
Description
MOSFET

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MOSFET Silikron
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