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SSF2112H2 MOSFET

SSF2112H2 Description

                                 Main Product Characteristics: VDSS 20V RDS(on) 10mohm(typ.) ID 8A TSSOP-8  .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ra.

SSF2112H2 Features

* Advanced trench MOSFET process technology
* Special designed for buttery protection, load switching and general power management
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature SSF2112H

SSF2112H2 Applications

* Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Vo

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Datasheet Details

Part number
SSF2112H2
Manufacturer
Silikron
File Size
594.75 KB
Datasheet
SSF2112H2-Silikron.pdf
Description
MOSFET

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MOSFET Silikron
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