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SSF2160G4, SSF2160G4-GOOD 20V N-Channel MOSFET

SSF2160G4 Description

Main Product Characteristics VDSS 20V RDS(on) 28mohm(typ.) ID 4.5A SOT23-3 .
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rat.

SSF2160G4 Features

* Advanced trench MOSFET process technology
* Special designed for buttery protection, load switching and general power management
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature
* Lead free product SSF21

SSF2160G4 Applications

* Absolute Max Rating Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 20 ±10 4.5 18 1.1 -55 To 150 Unit V V A A W ℃ Thermal Resis

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SSF2160G4, SSF2160G4-GOOD. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SSF2160G4, SSF2160G4-GOOD
Manufacturer
GOOD-ARK
File Size
951.86 KB
Datasheet
SSF2160G4-GOOD-ARK.pdf
Description
20V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SSF2160G4, SSF2160G4-GOOD.
Please refer to the document for exact specifications by model.

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20V N-Channel MOSFET GOOD-ARK
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