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SVS60R360DE3 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVS60R360DE3 datasheet PDF (SVS60R360FJHE3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 600v super junction mos power transistor.

Description

SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 11A, 600V, RDS(on)(typ. )=0.3@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 1 TO-220FJD-3L 2 3 TO-220FJH-3L 1 3 DFN-4-8x8x0.85-2.0 TO-252-2L KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS60R360FJHE3-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS60R360DE3
Manufacturer Silan Microelectronics
File Size 443.84 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVS60R360DE3 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SVS60R360FJH(FJD)(D)(L8A)E3_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  11A, 600V, RDS(on)(typ.)=0.
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