Datasheet Details
| Part number | SVS60R360FJHE3 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 443.84 KB |
| Description | 600V SUPER JUNCTION MOS POWER TRANSISTOR |
| Datasheet |
 SVS60R360FJHE3 Datasheet
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Description
SVS60R360FJH(FJD)(D)(L8A)E3 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
Features
- 11A, 600V, RDS(on)(typ. )=0.3@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability.
- 100% avalanche tested.
- Pb-free lead plating.
- RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 1 TO-220FJD-3L 2 3 TO-220FJH-3L 1 3 DFN-4-8x8x0.85-2.0 TO-252-2L KEY.