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SVGP157R5NT - 150V N-CHANNEL MOSFET

Description

SVGP157R5NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 100A, 150V, RDS(on)(typ. )=6.2m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 123 TO-220-3L 3 12 3 TO-247-3L.

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Datasheet preview – SVGP157R5NT

Datasheet Details

Part number SVGP157R5NT
Manufacturer Silan Microelectronics
File Size 406.80 KB
Description 150V N-CHANNEL MOSFET
Datasheet download datasheet SVGP157R5NT Datasheet
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Silan Microelectronics SVGP157R5NT(P7)_Datasheet 100A, 150V N-CHANNEL MOSFET DESCRIPTION SVGP157R5NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  100A, 150V, RDS(on)(typ.)=6.2m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 123 TO-220-3L 3 12 3 TO-247-3L FEATURES Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 150 2.0~4.0 7.
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