HYB39S16160CT-8 - 16 MBit Synchronous DRAM

Siemens Semiconductor

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Datasheet Details

Part number	HYB39S16160CT-8
Manufacturer	Siemens Semiconductor
File Size	138.53 KB
Description	16 MBit Synchronous DRAM
Datasheet	HYB39S16160CT-8_SiemensSemiconductor.pdf

HYB39S16160CT-8 Product details

Description

Pin Names CLK CKE CS RAS CAS WE A0 - A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ DQM, LDQM, UDQM Data Input /Output Data Mask Power (+ 3.3 V) Ground Power for DQ’s (+ 3.3 V) Ground for DQ’s Not connected VDD VSS VDDQ VSSQ NC Semiconductor Group 2 1998-10-01 HYB 39S16400/800/160CT-8/-10 www.DataSheet4U.com 16 MBit Synchronous DRAM VDD N.C.VSSQ DQ0 VDDQ N.C.VSSQ DQ1 VDDQ N.C.N.C.WE CAS RAS CS A11 A

Features

Bit Synchronous DRAM Operation Definition All of SDRAM operations are defined by states of control signals CS, RAS,.

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Published: Apr 10, 2010 |