HYB39S16160CT-6 - 1M x 16 MBit Synchronous DRAM

Siemens Semiconductor

HYB39S16160CT-6 Datasheet Preview — Preview of HYB39S16160CT-6 PDF

Datasheet Details

Part number	HYB39S16160CT-6
Manufacturer	Siemens Semiconductor
File Size	173.11 KB
Description	1M x 16 MBit Synchronous DRAM
Datasheet	HYB39S16160CT-6_SiemensSemiconductor.pdf

HYB39S16160CT-6 Product details

Description

LVTTL-version: HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM Pin Description and Pinouts: CLK CKE CS RAS CAS WE A0-A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ LDQM, UDQM Vdd Vss Vddq Vssq NC Data Input /Output Data Mask Power (+3.3V) Ground Power for DQ’s (+ 3.3V) Ground for DQ’s not connected Pin-Out Vdd DQ0 DQ1 Vssq

Features

ck, a RAS cycle starts. According to address data, a word line of the selected bank is activated and all of sense amplifiers associated to the word line a.

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Published: Apr 10, 2010 |