| Part number | HYB39S16160CT-7, HYB39S16160CT-6 |
|---|---|
| Manufacturer | Siemens Semiconductor |
| File Size | 173.11 KB |
| Description | 1M x 16 MBit Synchronous DRAM |
| Datasheet |
 HYB39S16160CT-6_SiemensSemiconductor.pdf
|
| Note |
This datasheet PDF includes multiple part numbers: HYB39S16160CT-7, HYB39S16160CT-6. Please refer to the document for exact specifications by model. |
LVTTL-version: HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM Pin Description and Pinouts: CLK CKE CS RAS CAS WE A0-A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ LDQM, UDQM Vdd Vss Vddq Vssq NC Data Input /Output Data Mask Power (+3.3V) Ground Power for DQ’s (+ 3.3V) Ground for DQ’s not connected Pin-Out Vdd DQ0 DQ1 Vssq
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