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HYB39S16160AT-8, HYB39S16160AT-10 Datasheet - Siemens Semiconductor

HYB39S16160AT-8 16 MBit Synchronous DRAM

VDD VSS VDDQ VSSQ NC Semiconductor Group 2 1998-10-01 HYB 39S16400/800/160AT-8/-10 www.DataSheet4U.com 16 MBit Synchronous DRAM VDD DQ0 VSSQ DQ1 VDDQ DQ2 VSSQ DQ3 VDDQ N.C. N.C. WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 3.
www.DataSheet4U.com 16 MBit Synchronous DRAM (second generation) Advanced Information High Performance: CAS latency = 3 -8 125 8 7 -10 100 10 8 Units MHz ns ns HYB 39S16400/800/160AT-8/-10 Multiple Burst Read with Single Write Operation Automatic and Controlled Precharge Command Data Mask for Read/Write control (× 4, × 8) Dual Data Mask for byte control (× 16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down .

HYB39S16160AT-8 Features

* e Register For application flexibility, a CAS latency, a burst length, and a burst sequence can be progr

HYB39S16160AT-10_SiemensSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HYB39S16160AT-8, HYB39S16160AT-10. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HYB39S16160AT-8, HYB39S16160AT-10

Manufacturer:

Siemens Semiconductor

File Size:

185.73 KB

Description:

16 mbit synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: HYB39S16160AT-8, HYB39S16160AT-10.
Please refer to the document for exact specifications by model.

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HYB39S16160AT-8 HYB39S16160AT-10 MBit Synchronous DRAM Siemens Semiconductor

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