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HCS80R670S - 800V N-Channel Super Junction MOSFET

Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.67 17.4 Unit V A Ω nC.

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Datasheet Details

Part number HCS80R670S
Manufacturer SemiHow
File Size 223.31 KB
Description 800V N-Channel Super Junction MOSFET
Datasheet download datasheet HCS80R670S Datasheet

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Full PDF Text Transcription

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HCS80R670S Dec 2019 HCS80R670S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.67 17.
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