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SBE817 - Rectifier

Features

  • Composite type with 2 low IR SBDs in one package, facilitating high density mounting. Small switching noise. Low forward voltage (IF=2.0A, VF max=0.57V). Low reverse current (VR=7.5V, IR max=6μA). Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surg.

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www.DataSheet.co.kr Ordering number : ENA0328 SBE817 SANYO Semiconductors DATA SHEET SBE817 Applications • Low IR Schottky Barrier Diode 15V, 2.0A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • Composite type with 2 low IR SBDs in one package, facilitating high density mounting. Small switching noise. Low forward voltage (IF=2.0A, VF max=0.57V). Low reverse current (VR=7.5V, IR max=6μA). Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm).
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