SBE807 - Schottky Barrier Diode

Datasheet Summary

Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

Low Switching Noise.
Low Reverse Current (VR = 16 V, IR Max=15 mA).
This Device is Pb.
Free and Halide Free.

ON Semiconductor

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Datasheet Details

Part number	SBE807
Manufacturer	ON Semiconductor
File Size	142.46 KB
Description	Schottky Barrier Diode
Datasheet	SBE807 Datasheet
Additional preview pages of the SBE807 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diode 30 V, 1 A, Low IR SBE807 Features • Low Switching Noise • Low Reverse Current (VR = 16 V, IR Max=15 mA) • This Device is Pb−Free and Halide Free Applications • High Frequency Rectification (Switching Regulators, Converters, and Choppers) Specifications ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM − 30 V Nonrepetitive Peak Reverse VRSM − Surge Voltage 35 V Average Output Current Surge Forward Current IO − 1.0 A IFSM 50 Hz sine 10 A wave, 1 cycle Junction Temperature Tj − − 55 to °C +125 Storage Temperature Tstg − − 55 to °C +125 Stresses exceeding those listed in the Maximum Ratings table may damage the device.

Published: Jan 22, 2016 |