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SBE812 - Schottky Barrier Diode

Datasheet Summary

Features

  • Small switching noise.
  • Low leakage current and high reliability due to highly reliable planar structure.
  • Ultrasmall package allows applied sets to be made small and thin Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj 50Hz sine wave, 1 cycle Storage Tem.

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Datasheet Details

Part number SBE812
Manufacturer ON Semiconductor
File Size 228.13 KB
Description Schottky Barrier Diode
Datasheet download datasheet SBE812 Datasheet
Additional preview pages of the SBE812 datasheet.

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Full PDF Text Transcription

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Ordering number : EN8966A SBE812 Schottky Barrier Diode 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode http://onsemi.com Applications • High frequency rectification (switching regulators, converters, choppers) Features • Small switching noise • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package allows applied sets to be made small and thin Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj 50Hz sine wave, 1 cycle Storage Temperature Tstg Ratings 60 65 1.
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