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SBE818 - Schottky Barrier Diode

Datasheet Summary

Features

  • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting.
  • Small switching noise.
  • Low forward voltage (IF=2.0A, VF max=0.62V).
  • Low reverse current (VR=15V, IR max=7.5μA).
  • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRRM Nonrepetit.

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Datasheet Details

Part number SBE818
Manufacturer ON Semiconductor
File Size 452.88 KB
Description Schottky Barrier Diode
Datasheet download datasheet SBE818 Datasheet
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Ordering number : ENA1379A SBE818 Schottky Barrier Diode 30V, 2A, Low IR, Non-Monolithic Dual EMH8 Common Cathode http://onsemi.com Applications • High frequency rectification (switching regulators, converters, choppers) Features • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting • Small switching noise • Low forward voltage (IF=2.0A, VF max=0.62V) • Low reverse current (VR=15V, IR max=7.5μA) • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.
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