K4D623238B-GC - 64Mbit DDR SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4D623238B-GC
Manufacturer	Samsung
File Size	147.36 KB
Description	64Mbit DDR SDRAM
Datasheet	K4D623238B-GC Datasheet
Additional preview pages of the K4D623238B-GC datasheet.

Product details

Description

FOR 512K x 32Bit x 4 Bank DDR SDRAM The K4D623238 is 67,108,864 bits of hyper synchronous data rate Dynamic RAM organized as 2 x1,048,976 words by 32 bits, fabricated with SAMSUNG ’ s high performance CMOS technology.Synchronous

Features

2.5V + 5% power supply for device operation.
VDD/VDDQ = 2.8V ± 5% for -33.
VDD/VDDQ = 2.5V ± 5% for -60/-55/-50/-45/-40.
SSTL_2 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs -. Read latency 3,4,5 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
Full page burst length for sequential burst type only.
Start address of the full page burst should be even.

📁 Similar Datasheet

K4D263238I-VC - 128M-Bit GDDR SDRAM (Samsung Electronics)
K4D26323GC - 128Mbit GDDR SDRAM (Samsung semiconductor)
K4D26323QG - 128Mbit GDDR SDRAM (Samsung semiconductor)

Other Datasheets by Samsung

K4D261638 - 128Mbit GDDR SDRAM
K4D261638F - 128Mbit GDDR SDRAM
K4D261638K - 128Mbit GDDR SDRAM
K4D261638K-LC40 - 128Mbit GDDR SDRAM
K4D261638K-LC50 - 128Mbit GDDR SDRAM
K4D263238A - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM

Published: Apr 25, 2005 |