K4D623238B-GC Datasheet - Samsung

K4D623238B-GC 64Mbit DDR SDRAM

K4D623238B-GC 64M DDR SDRAM 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL (144-Ball FBGA) Revision 1.4 September 2002 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.4 (Sep. 2002) K4D623238B-GC Revision History Revision 1.4 (September 26, 2002) Added tCK(min) and tCK(max) at CL=3 and CL=4 64M DDR SDRAM Revision 1.3 (March 5, 2002) Changed tCK(max.

K4D623238B-GC Features

* 2.5V + 5% power supply for device operation

* VDD/VDDQ = 2.8V ± 5% for -33

* VDD/VDDQ = 2.5V ± 5% for -60/-55/-50/-45/-40

* SSTL_2 compatible inputs/outputs

* 4 banks operation

* MRS cycle with address key programs -. Read latency 3,4,5 (clock) -. Bu

K4D623238B-GC_Samsungsemiconductor.pdf