K4D26323GC, K4D26323QG - 128Mbit GDDR SDRAM

Samsung semiconductor

K4D26323GC Datasheet Preview — This datasheet PDF includes multiple part numbers: K4D26323GC, K4D26323QG. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	K4D26323GC, K4D26323QG
Manufacturer	Samsung semiconductor
File Size	360.75 KB
Description	128Mbit GDDR SDRAM
Datasheet	K4D26323QG_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4D26323GC, K4D26323QG. Please refer to the document for exact specifications by model.

K4D26323GC Product details

Description

FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with

Features

1.8V ± 0.1V power supply for device operation.
1.8V ± 0.1V power supply for I/O interface www. DataSheet4U. com.
No Wrtie-Interrupted by Read Function.
4 DQS’s ( 1DQS / Byte ).
Data I/O transactions on both edges of Data strobe.
DLL aligns DQ and DQS transitions with Clock transition.
Edge aligned data & data strobe output.
Center aligned data & data strobe input.
DM for write masking only.
Auto & Self refr.

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Published: Dec 23, 2008 |