K4D263238G-GC - 128Mbit GDDR SDRAM

Samsung

K4D263238G-GC Datasheet Preview — Preview of K4D263238G-GC PDF

Datasheet Details

Part number	K4D263238G-GC
Manufacturer	Samsung
File Size	325.61 KB
Description	128Mbit GDDR SDRAM
Datasheet	K4D263238G-GC_Samsungsemiconductor.pdf

K4D263238G-GC Product details

Description

FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with

Features

2.5V ± 5% power supply for device operation.
2.5V ± 5% power supply for I/O interface.
SSTL_2 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs -. Read latency 3, 4 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
All inputs except data & DM are sampled at the positive going edge of the system clock.
Differential clock input.
No Wrtie-Interrupted by Read Function.

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Other Datasheets by Samsung

K4D263238A - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238D - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238E - 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM
K4D263238F - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238I-UC - 128M GDDR SDRAM
K4D263238M - 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM

Published: Apr 25, 2005 |