K4D263238I-VC - 128M-Bit GDDR SDRAM

Samsung Electronics

K4D263238I-VC Datasheet Preview — Preview of K4D263238I-VC PDF

Datasheet Details

Part number	K4D263238I-VC
Manufacturer	Samsung Electronics
File Size	475.81 KB
Description	128M-Bit GDDR SDRAM
Datasheet	K4D263238I-VC_SamsungElectronics.pdf

K4D263238I-VC Product details

Description

FOR 1M x 32Bit x 4 Bank DDR SDRAM The K4D263238I is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with

Features

2.5V ± 5% power supply for device operation.
2.5V ± 5% power supply for I/O interface.
SSTL_2 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
Full page burst length for sequential burst type only.
Start address of the full page burst should be even.
All inputs except data & DM are samp.

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Published: Oct 15, 2007 |