K4D261638 - 128Mbit GDDR SDRAM

Samsung

K4D261638 Datasheet Preview — Preview of K4D261638 PDF

Datasheet Details

Part number	K4D261638
Manufacturer	Samsung
File Size	225.88 KB
Description	128Mbit GDDR SDRAM
Datasheet	K4D261638_Samsungsemiconductor.pdf

K4D261638 Product details

Description

FOR 2M x 16Bit x 4 Bank DDR SDRAM The K4D261638F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with

Features

2.5V + 5% power supply for device operation.
2.5V + 5% power supply for I/O interface.
SSTL_2 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs -. Read latency 3, 4 and 5(clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
All inputs except data & DM are sampled at the positive going edge of the system clock.
Differential clock input.
No Wrtie-Interrupted by Read Func.

📁 K4D261638 Similar Datasheet

K4D263238I-VC - 128M-Bit GDDR SDRAM (Samsung Electronics)
K4D26323GC - 128Mbit GDDR SDRAM (Samsung semiconductor)
K4D26323QG - 128Mbit GDDR SDRAM (Samsung semiconductor)

Other Datasheets by Samsung

K4D261638F - 128Mbit GDDR SDRAM
K4D261638K - 128Mbit GDDR SDRAM
K4D261638K-LC40 - 128Mbit GDDR SDRAM
K4D261638K-LC50 - 128Mbit GDDR SDRAM
K4D263238A - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
K4D263238D - 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM

Published: Apr 25, 2005 |