Datasheet4U Logo Datasheet4U.com

K4S563233FHN75 Datasheet - Samsung semiconductor

K4S563233FHN75_Samsungsemiconductor.pdf

Preview of K4S563233FHN75 PDF
K4S563233FHN75 Datasheet Preview Page 2 K4S563233FHN75 Datasheet Preview Page 3

Datasheet Details

Part number:

K4S563233FHN75

Manufacturer:

Samsung semiconductor

File Size:

140.87 KB

Description:

2m x 32bit x 4 banks mobile sdram in 90fbga.

K4S563233FHN75, 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c

K4S563233FHN75 Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

📁 Related Datasheet

📌 All Tags

Samsung semiconductor K4S563233FHN75-like datasheet