K4S563233FHN - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung semiconductor

The K4S563233FHN by Samsung semiconductor is a 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA. Below is the official datasheet preview.

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K4S563233FHN 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S563233FHN** 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S563233FHN
Manufacturer	Samsung semiconductor
File Size	140.87 KB
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4S563233FHN_Samsungsemiconductor.pdf
Additional preview pages of the K4S563233FHN datasheet.

K4S563233FHN Product details

Description

The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S563233FHN75 - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S563233F - 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4S56323LF-FC - 2M x 32Bit x 4 Banks Mobile SDRAM
K4S56323LF-FE - 2M x 32Bit x 4 Banks Mobile SDRAM
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K4S56323LF-FHE - 2M x 32Bit x 4 Banks Mobile SDRAM

Published: Apr 7, 2005 |