K4S561633F - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S561633F
Manufacturer	Samsung semiconductor
File Size	114.04 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
Datasheet	K4S561633F Datasheet
Additional preview pages of the K4S561633F datasheet.

Product details

Description

The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F1L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-F75 - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-G - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Published: Apr 7, 2005 |