K4S561633F-F1H - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S561633F-F1H
Manufacturer	Samsung semiconductor
File Size	114.04 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
Datasheet	K4S561633F-F1H Datasheet
Additional preview pages of the K4S561633F-F1H datasheet.

Product details

Description

The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

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K4S561633F-C - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
K4S561633F-E - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
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K4S561633F-L - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

Published: Apr 7, 2005 |