K4S161622H 16Mb H-die SDRAM Specification

Samsung semiconductor

Description

SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products.
The K4S161622H is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high per.

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Datasheet Specifications

Part number: K4S161622H
Manufacturer: Samsung semiconductor
File Size: 108.44 KB
Datasheet: K4S161622H_Samsungsemiconductor.pdf
Description: 16Mb H-die SDRAM Specification

Features

* 3.3V power supply LVTTL compatible with multiplexed address two banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

Applications

* ORDERING INFORMATION Part NO. K4S161622H-TC55 K4S161622H-TC60 K4S161622H-TC70 K4S161622H-TC80 MAX Freq. 183MHz 166MHz 143MHz 125MHz LVTTL 50pin TSOP(II) Interface Package Organization 1Mx16 Row Address A0~A10 Column Address A0-A7 Row & Column address configuration Rev. 1.5 August 2004 SDRAM

K4S161622H Distributors

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K4S161622H 16Mb H-die SDRAM Specification Samsung semiconductor

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