K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM

Samsung semiconductor

Description

K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM .
The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high per.

📥 Download Datasheet

K4S161622D Datasheet Preview — Preview of K4S161622D PDF

Datasheet Specifications

Part number: K4S161622D
Manufacturer: Samsung semiconductor
File Size: 1.10 MB
Datasheet: K4S161622D_Samsungsemiconductor.pdf
Description: 512K x 16Bit x 2 Banks Synchronous DRAM

Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

Applications

* ORDERING INFORMATION Part NO. K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80 K4S161622D-TC/L10 MAX Freq. 183MHz 166MHz 143MHz 125MHz 100MHz LVTTL 50 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE Dat

K4S161622D Distributors

📁 Related Datasheet

K4S1G0632D K4S1G0732D K4S280432I K4S280832B K4S280832I K4S281632I

📌 All Tags

K4S161622D 512K 16Bit Banks Synchronous DRAM Samsung semiconductor

Samsung semiconductor K4S161622D-like datasheet