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K4S161622E, K4S 1M x 16 SDRAM

K4S161622E Description

K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to .
The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high per.

K4S161622E Features

* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive

K4S161622E Applications

* ORDERING INFORMATION Part NO. K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC70 K4S161622E-TC80 K4S161622E-TC10 MAX Freq. 183MHz 166MHz 143MHz 125MHz 100MHz LVTTL 50 TSOP(II) Interface Package FUNCTIONAL BLOCK DIAGRAM I/O Control LWE LDQM Data Inp

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4S161622E, K4S. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S161622E, K4S
Manufacturer
Samsung semiconductor
File Size
675.26 KB
Datasheet
K4S-1616.pdf
Description
1M x 16 SDRAM
Note
This datasheet PDF includes multiple part numbers: K4S161622E, K4S.
Please refer to the document for exact specifications by model.

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SDRAM Samsung semiconductor
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