Datasheet4U Logo Datasheet4U.com

STS26N3LLH6 N-channel Power MOSFET

STS26N3LLH6 Description

STS26N3LLH6 N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET .
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

STS26N3LLH6 Features

* Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* Low gate drive power losses

📥 Download Datasheet

Preview of STS26N3LLH6 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • STS2601 - P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STS2611 - P-Channel E nhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STS2620 - Dual Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STS2620A - Dual Enhancement Mode Field Effect Transistor (SamHop)
  • STS2621 - Dual P -Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STS2622 - Dual N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STS2622A - Dual N-Channel MOSFET (SamHop Microelectronics)
  • STS20NHS3LL - N-CHANNEL POWER MOSFET (ST Microelectronics)

📌 All Tags

N-channel Power MOSFET STMicroelectronics
STMicroelectronics STS26N3LLH6-like datasheet