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STS20N3LLH6 N-channel MOSFET

STS20N3LLH6 Description

STS20N3LLH6 N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET .
t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, ucwith a new gate structure.

STS20N3LLH6 Features

* Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.0047 Ω 20 A t(s)
* RDS(on)
* Qg industry benchmark uc
* Extremely low on-resistance RDS(on) d
* High avalanche ruggedness ro
* Low gate drive power losses P

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N-channel MOSFET STMicroelectronics
STMicroelectronics STS20N3LLH6-like datasheet