Datasheet4U Logo Datasheet4U.com

STS10P4LLF6 P-Channel Power MOSFET

STS10P4LLF6 Description

STS10P4LLF6 Datasheet P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) AM0.
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

STS10P4LLF6 Features

* Order code VDS STS10P4LLF6 -40 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

📥 Download Datasheet

Preview of STS10P4LLF6 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • STS100 - Multifunction Telecommunications Switch (Solid State Optronic)
  • STS10100S - TRENCH SCHOTTKY BARRIER DIODE (JILIN SINO)
  • STS10DN3LH5 - Power MOSFETs (ST Microelectronics)
  • STS10NF30L - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
  • STS10T06 - Low Vf Schottky Diode (STANSON)
  • STS11NF30L - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
  • STS11NF3LL - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
  • STS123 - NPN Silicon Transistor (AUK)

📌 All Tags

P-Channel Power MOSFET STMicroelectronics
STMicroelectronics STS10P4LLF6-like datasheet