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S T S 2620
S amHop Microelectronics C orp.
F eb,25 2005 V er1.1
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
20V
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-20V
ID
2.5A
R DS (ON) ( m W )
Max
ID
-2A
R DS (ON) ( m W )
Max
80 @ V G S = 4.5V 110 @ V G S = 2.5V D1
130 @ V G S = -4.5V 190 @ V G S = -2.5V D2
TS OP 6 Top View
G1 S1 G2
1 2 3
6 5 4
D1 S2 D2
G1 S1 N-ch G2 S2 P -ch
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage
www.DataSheet4U.com Gate-S ource Voltage
S ymbol V DS V GS ID IDM IS PD T J , T S TG
N-C hannel P-C hannel 20 10 2.5 8 1.25 1.0 -55 to 150 -20 10 -2 -7 -1.