STS26N3LLH6 - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STS26N3LLH6
Manufacturer	STMicroelectronics
File Size	724.63 KB
Description	N-channel Power MOSFET
Datasheet	STS26N3LLH6 Datasheet
Additional preview pages of the STS26N3LLH6 datasheet.

Product details

Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Features

Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω.
RDS(on).
Qg industry benchmark.
Extremely low on-resistance RDS(on).
High avalanche ruggedness.
Low gate drive power losses.
Very low switching gate charge ID 26 A.

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Published: Mar 21, 2020 |