STG15M120F3D8 Datasheet - STMicroelectronics

STG15M120F3D8, IGBT

STG15M120F3D8 Datasheet 1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG15M120F3D8-STMicroelectronics.pdf

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Datasheet Details

Part number:

STG15M120F3D8

Manufacturer:

STMicroelectronics ↗

File Size:

219.76 KB

Description:

IGBT

Features

* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ. ) at IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

Applications

* E
* Motor control EGCD
* Industrial drives
* PFC
* UPS
* Solar

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