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STG15M120F3D8 IGBT

STG15M120F3D8 Description

STG15M120F3D8 Datasheet 1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG15M120F3D8 Features

* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ. ) at IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

STG15M120F3D8 Applications

* E
* Motor control EGCD
* Industrial drives
* PFC
* UPS
* Solar

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IGBT STMicroelectronics
STMicroelectronics STG15M120F3D8-like datasheet