STG200M65F2D8AG Datasheet - STMicroelectronics

STG200M65F2D8AG, IGBT

STG200M65F2D8AG Datasheet Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing C .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

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Datasheet Details

Part number:

STG200M65F2D8AG

Manufacturer:

STMicroelectronics ↗

File Size:

301.13 KB

Description:

IGBT

Features

* AEC-Q101 qualified
* Low-loss series IGBT G
* Low VCE(sat) = 1.55 V (typ. ) at IC = 200 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution
* Maximum junction temperature: TJ = 175 °C E
* 6 µs minimum short-ci

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