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STG15M120F3D7 IGBT

STG15M120F3D7 Description

STG15M120F3D7 Datasheet Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG15M120F3D7 Features

* 10 µs of short-circuit withstanding time
* Low VCE(sat) = 1.85 V (typ. ) @ IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

STG15M120F3D7 Applications

* E
* Industrial motor control EGCD
* Industrial drives
* Solar inverters
* Uninterruptable power supplies (UPS)

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IGBT STMicroelectronics
STMicroelectronics STG15M120F3D7-like datasheet