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STG15M120F3D7 Datasheet - STMicroelectronics

STG15M120F3D7, IGBT

STG15M120F3D7 Datasheet Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing C G .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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STG15M120F3D7-STMicroelectronics.pdf

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Datasheet Details

Part number:

STG15M120F3D7

Manufacturer:

STMicroelectronics ↗

File Size:

258.50 KB

Description:

IGBT

Features

* 10 µs of short-circuit withstanding time
* Low VCE(sat) = 1.85 V (typ. ) @ IC = 15 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution

Applications

* E
* Industrial motor control EGCD
* Industrial drives
* Solar inverters
* Uninterruptable power supplies (UPS)

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