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STG200G65FD8AG IGBT

STG200G65FD8AG Description

STG200G65FD8AG Datasheet Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing C .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STG200G65FD8AG Features

* G E EGCD Product status link STG200G65FD8AG
* AEC-Q101 qualified
* Low-loss series IGBT
* Low VCE(sat) = 1.52 V (typ. ) at IC = 200 A
* Positive VCE(sat) temperature coefficient
* Tight parameter distribution
* Maximum junction temperature: TJ

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IGBT STMicroelectronics
STMicroelectronics STG200G65FD8AG-like datasheet