SCTW40N120G2VAG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTW40N120G2VAG Description

SCTW40N120G2VAG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW40N120G2VAG Features

* Order code SCTW40N120G2VAG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 3 2 1
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)

SCTW40N120G2VAG Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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Datasheet Details

Part number: SCTW40N120G2VAG
Manufacturer: STMicroelectronics ↗
File Size: 227.29 KB
Datasheet: SCTW40N120G2VAG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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