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SCT10N120AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCT10N120AG
Manufacturer	STMicroelectronics
File Size	234.21 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT10N120AG-STMicroelectronics.pdf

SCT10N120AG Product details

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

Features

HiP247 3 2 1 D(2, TAB).
AEC-Q101 qualified.
Very tight variation of on-resistance vs. temperature.
Very high operating temperature capability (TJ = 200 °C).
Very fast and robust intrinsic body diode.
Low capacitance.

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Published: Mar 1, 2023 |