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SCT1000N170 - Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCT1000N170
Manufacturer	STMicroelectronics
File Size	300.82 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCT1000N170-STMicroelectronics.pdf

SCT1000N170 Product details

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

Features

Order code VDS RDS(on) max. ID SCT1000N170 1700 V 1.3 Ω 7A.
High speed switching performance.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C).

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Published: Jun 26, 2023 |