SCT012W90G3AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCT012W90G3AG
Manufacturer	STMicroelectronics
File Size	229.49 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT012W90G3AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB).
AEC-Q101 qualified.
Very low RDS(on) over the entire temperature range.
High speed switching performances.
Very fast and robust intrinsic body diode.
Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3).

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Published: Feb 18, 2023 |