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SCT1000N170AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCT1000N170AG
Manufacturer	STMicroelectronics
File Size	320.32 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCT1000N170AG-STMicroelectronics.pdf

SCT1000N170AG Product details

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

Features

Order code VDS RDS(on) max. ID SCT1000N170AG 1700 V 1.3 Ω 7A HiP247 3 2 1.
AEC-Q101 rev. C qualified.
Very fast and robust intrinsic body diode.
Low capacitances.
Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB).

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Published: Feb 18, 2023 |