SCT10N120 - 1200V 12A Silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number	SCT10N120
Manufacturer	STMicroelectronics
File Size	191.07 KB
Description	1200V 12A Silicon carbide Power MOSFET
Datasheet	SCT10N120-STMicroelectronics.pdf

SCT10N120 Product details

Description

AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability.These fea

Features

HiP247 3 2 1 D(2, TAB).
Very low RDS(on) over the entire temperature range.
Very high operating junction temperature capability (TJ = 200 °C).
Very fast and robust intrinsic body diode.
Low capacitance.

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Published: Apr 15, 2020 |