RF2L42008CG2 RF power LDMOS transistor

STMicroelectronics

Description

RF2L42008CG2 Datasheet 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor 1 3 2 E2 Pin connection Pin Connection 1 Drain 2 Source (bottom sid.
The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in.

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Datasheet Specifications

Part number: RF2L42008CG2
Manufacturer: STMicroelectronics ↗
File Size: 1.53 MB
Datasheet: RF2L42008CG2-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code Frequency VDD POUT Gain Efficiency RF2L42008CG2 3600 MHz 28 V 8W 14.5 dB 47%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched for ease of use
* Large positive and negative gate-source voltage range fo

Applications

* Telecom and wideband communications
* Avionics and radar

RF2L42008CG2 Distributors

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RF2L42008CG2 power LDMOS transistor STMicroelectronics

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