Datasheet4U Logo Datasheet4U.com

GB19NC60K - short circuit rugged IGBT

GB19NC60K Description

STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT .
te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on-state sobehavior.

GB19NC60K Features

* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction susceptibility)
* Short circuit withstand time 10 µs

GB19NC60K Applications

* t(s
* High frequency inverters uc

📥 Download Datasheet

Preview of GB19NC60K PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GB100DA60UP - Insulated Gate Bipolar Transistor (Vishay Siliconix)
  • GB100TS60NPBF - Ultrafast Speed IGBT (Vishay Siliconix)
  • GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • GB10MPS17-247 - Silicon Carbide Schottky Diode (GeneSiC)
  • GB10NB37LZ - internally clamped IGBT (ST Microelectronics)
  • GB10RF120K - IGBT PIM MODULE (International Rectifier)
  • GB10SLT12-252 - Silicon Carbide Schottky Diode (GeneSiC)
  • GB14C40L - IRGB14C40L (International Rectifier)

📌 All Tags

short circuit rugged IGBT STMicroelectronics
STMicroelectronics GB19NC60K-like datasheet