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GB10NC60HD - very fast IGBT

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Figure 1.

Table 1.

Features

  • Low on-voltage drop (VCE(sat)).
  • Low CRES / CIES ratio (no cross-conduction susceptibility).
  • Very soft ultra fast recovery antiparallel diode.

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STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. 3 1 D²PAK 2 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1.