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GB10HF60KD Datasheet short-circuit rugged IGBT

Manufacturer: STMicroelectronics

General Description

cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode.

The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applications operating at high Obsolefrequencies.

3 2 1 TO-220FP TAB 3 2 1 TO-220 3 1 D²PAK Figure 1.

Overview

STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • Operating junction temperature up to 175 °C.
  • Low Cres / Cies ratio (no cross conduction )susceptibility) t(s.
  • Tight parameter distribution uc.
  • Ultrafast soft-recovery antiparallel diode d.
  • Short-circuit rugged Pro.