Datasheet4U Logo Datasheet4U.com

GB10MPS17-247 Silicon Carbide Schottky Diode

GB10MPS17-247 Description

GB10MPS17-247 1700V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode .

GB10MPS17-247 Features

* High Avalanche (UIS) Capability
* Enhanced Surge Current Capability
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* 175 °C Maximum Operating Temperature
* Temperature Independent Switching Behavior
* Positive Temperature Coefficie

GB10MPS17-247 Applications

* Boost Diode in Power Factor Correction (PFC)
* Switched Mode Power Supply (SMPS)
* Uninterruptible Power Supply (UPS)
* Motor Drives
* Freewheeling / Anti-parallel Diode in Inverters
* Solar Inv

📥 Download Datasheet

Preview of GB10MPS17-247 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GB10MPS17-247
Manufacturer
GeneSiC
File Size
307.86 KB
Datasheet
GB10MPS17-247-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

📁 Related Datasheet

  • GB100DA60UP - Insulated Gate Bipolar Transistor (Vishay Siliconix)
  • GB100TS60NPBF - Ultrafast Speed IGBT (Vishay Siliconix)
  • GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • GB10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
  • GB10NB37LZ - internally clamped IGBT (ST Microelectronics)
  • GB10NB60S - low drop IGBT (STMicroelectronics)
  • GB10NC60HD - very fast IGBT (STMicroelectronics)
  • GB10NC60K - short-circuit rugged IGBT (STMicroelectronics)

📌 All Tags

Silicon Carbide Schottky Diode GeneSiC
GeneSiC GB10MPS17-247-like datasheet