Datasheet4U Logo Datasheet4U.com

GB10HF60KD short-circuit rugged IGBT

GB10HF60KD Description

STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT .
cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode.

GB10HF60KD Features

* Low on-voltage drop (VCE(sat))
* Operating junction temperature up to 175 °C
* Low Cres / Cies ratio (no cross conduction )susceptibility) t(s
* Tight parameter distribution uc
* Ultrafast soft-recovery antiparallel diode d

GB10HF60KD Applications

* lete
* Motor drives o
* High frequency inverters bs

📥 Download Datasheet

Preview of GB10HF60KD PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GB100DA60UP - Insulated Gate Bipolar Transistor (Vishay Siliconix)
  • GB100TS60NPBF - Ultrafast Speed IGBT (Vishay Siliconix)
  • GB10B60KD - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
  • GB10MPS17-247 - Silicon Carbide Schottky Diode (GeneSiC)
  • GB10NB37LZ - internally clamped IGBT (ST Microelectronics)
  • GB10RF120K - IGBT PIM MODULE (International Rectifier)
  • GB10SLT12-252 - Silicon Carbide Schottky Diode (GeneSiC)
  • GB14C40L - IRGB14C40L (International Rectifier)

📌 All Tags

short-circuit rugged IGBT STMicroelectronics
STMicroelectronics GB10HF60KD-like datasheet