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STP2301 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet preview – STP2301

Datasheet Details

Part number STP2301
Manufacturer STANSON
File Size 370.56 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP2301 Datasheet
Additional preview pages of the STP2301 datasheet.

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STP2301 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STP2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE -20V/-2.8A, RDS(ON) = 90m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 110m-ohm @VGS = -2.
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